IRFH8334TRPBF
MOSFET N-CH 30V 14A/44A PQFNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFH8334TRPBF is an N-Channel MOSFET designed for high-efficiency power applications. This component features a 30V drain-source breakdown voltage (Vdss) and supports continuous drain currents of 14A at ambient temperature (Ta) and 44A at case temperature (Tc). Its low on-resistance (Rds On) of 9mOhm at 20A and 10V gate-source voltage (Vgs) minimizes conduction losses. The device offers a maximum power dissipation of 3.2W (Ta) and 30W (Tc). Key electrical parameters include a gate charge (Qg) of 15 nC at 10V and input capacitance (Ciss) of 1180 pF at 10V. Available in a PQFN (5x6) package, it is suitable for surface mounting and operates across a broad temperature range of -55°C to 150°C. This MOSFET is widely utilized in automotive, industrial, and consumer electronics sectors requiring robust power management solutions.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Ta), 44A (Tc) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.2W (Ta), 30W (Tc) |
| Vgs(th) (Max) @ Id | 2.35V @ 25µA |
| Supplier Device Package | PQFN (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1180 pF @ 10 V |
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