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IRFH8334TR2PBF

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IRFH8334TR2PBF

MOSFET N-CH 30V 12A 5X6 PQFN

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Infineon Technologies MOSFET N-Channel, part number IRFH8334TR2PBF, offers a 30V drain-source voltage and a continuous drain current of 14A at 25°C ambient or 44A at 25°C case. This N-Channel power MOSFET features a low Rds(on) of 9mOhm at 20A, 10V, and a typical gate charge of 15nC. The device utilizes MOSFET technology and is housed in an 8-PowerTDFN (PQFN 5x6) package for surface mounting. Its specifications make it suitable for applications in automotive and industrial power management systems. The component is supplied in cut tape packaging.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:
Technical Details:
PackagingCut Tape (CT)
Package / Case8-PowerTDFN
Mounting TypeSurface Mount
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C14A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs9mOhm @ 20A, 10V
FET Feature-
Vgs(th) (Max) @ Id2.35V @ 25µA
Supplier Device PackagePQFN (5x6)
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1180 pF @ 10 V

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