IRFH8330TRPBF
MOSFET N-CH 30V 17A/56A PQFNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFH8330TRPBF is an N-Channel MOSFET designed for high-performance applications. This component features a 30V drain-source voltage and supports continuous drain currents of 17A at ambient temperature and 56A at case temperature. The power dissipation is rated at 3.3W (Ta) and 35W (Tc). With a low Rds(On) of 6.6 mOhm at 20A and 10V, and a gate charge of 20 nC at 10V, this device offers efficient switching characteristics. It operates within a temperature range of -55°C to 150°C and is housed in an 8-PowerTDFN (PQFN 5x6) package, supplied on tape and reel. The IRFH8330TRPBF is suitable for power management systems across various industries including automotive and industrial automation.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Ta), 56A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.6mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.3W (Ta), 35W (Tc) |
| Vgs(th) (Max) @ Id | 2.35V @ 25µA |
| Supplier Device Package | PQFN (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1450 pF @ 25 V |
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