IRFH8330TR2PBF
MOSFET N-CH 30V 14A 5X6 PQFNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IRFH8330TR2PBF is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 30 V and offers a continuous drain current capability of 17A at 25°C ambient and 56A at 25°C case temperature. The low on-resistance of 6.6 mOhm at 20A and 10V gate-source voltage (Vgs) contributes to efficient power delivery. Key parameters include a gate charge (Qg) of 20 nC maximum at 10V Vgs and input capacitance (Ciss) of 1450 pF maximum at 25V Vds. The device is housed in an 8-PowerTDFN, 5x6 PQFN package for surface mounting and is supplied on cut tape. This MOSFET is suitable for use in power management, automotive, and industrial applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Ta), 56A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.6mOhm @ 20A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.35V @ 25µA |
| Supplier Device Package | PQFN (5x6) |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1450 pF @ 25 V |