IRFH8325TRPBF
MOSFET N-CH 30V 21A/82A PQFNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRFH8325TRPBF, features a 30V drain-source breakdown voltage. This device offers a continuous drain current of 21A at 25°C ambient and 82A at 25°C case temperature, with a maximum power dissipation of 3.6W (ambient) and 54W (case). The Rds(On) is specified at a maximum of 5mOhm at 20A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 32 nC maximum at 10V and input capacitance (Ciss) of 2487 pF maximum at 10V. The MOSFET is housed in an 8-PowerTDFN package, specifically a PQFN (5x6) footprint, suitable for surface mounting. Operating temperature range is from -55°C to 150°C. This component is utilized in various industrial applications including automotive and power management.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 21A (Ta), 82A (Tc) |
| Rds On (Max) @ Id, Vgs | 5mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.6W (Ta), 54W (Tc) |
| Vgs(th) (Max) @ Id | 2.35V @ 50µA |
| Supplier Device Package | PQFN (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2487 pF @ 10 V |
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