IRFH8325TR2PBF
MOSFET N-CH 30V 17A 5X6 PQFNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies MOSFET N-Channel IRFH8325TR2PBF. This 30V device features a low Rds(on) of 5mOhm at 20A and 10V Vgs, with a continuous drain current of 21A (Ta) and 82A (Tc). The N-Channel MOSFET is housed in a 5x6 PQFN package, specifically an 8-PowerTDFN, suitable for surface mounting. Key electrical parameters include a gate charge of 32 nC at 10V and input capacitance of 2487 pF at 10V. Applications leveraging this technology are found in automotive systems and industrial power management.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 21A (Ta), 82A (Tc) |
| Rds On (Max) @ Id, Vgs | 5mOhm @ 20A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.35V @ 50µA |
| Supplier Device Package | PQFN (5x6) |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2487 pF @ 10 V |
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