IRFH8324TR2PBF
MOSFET N-CH 30V 23A/90A PQFNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® N-Channel MOSFET, part number IRFH8324TR2PBF, offers a 30V drain-source breakdown voltage and a continuous drain current of 23A at 25°C ambient and 90A at 25°C case temperature. This device features low on-resistance of 4.1mOhm maximum at 20A and 10V, with gate drive voltages specified from 4.5V to 10V. The PQFN (5x6) package provides a low profile for surface mounting and includes a maximum power dissipation of 3.6W (ambient) and 54W (case). Key electrical parameters include a maximum gate charge of 31 nC at 10V and a maximum input capacitance of 2380 pF at 10V drain-source voltage. This MOSFET is suitable for applications in automotive, industrial power, and consumer electronics where efficient power switching is critical. Operating temperature ranges from -55°C to 150°C.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 23A (Ta), 90A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.1mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.6W (Ta), 54W (Tc) |
| Vgs(th) (Max) @ Id | 2.35V @ 50µA |
| Supplier Device Package | PQFN (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2380 pF @ 10 V |
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