IRFH8321TRPBF
MOSFET N CH 30V 21A PQFN5X6Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel MOSFET, part number IRFH8321TRPBF, offers a 30V drain-source voltage and a continuous drain current of 21A at ambient temperature, scaling to 83A at case temperature. This PQFN 5x6 packaged device features a low Rds(on) of 4.9mOhm at 20A and 10V, driven by gate voltages from 4.5V to 10V. Key parameters include a maximum gate charge of 59nC and input capacitance of 2600pF. With a maximum power dissipation of 3.4W (ambient) and 54W (case), it operates across a wide temperature range of -55°C to 150°C. This component is suitable for applications in automotive and industrial power management systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TQFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 21A (Ta), 83A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.9mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.4W (Ta), 54W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 50µA |
| Supplier Device Package | PQFN (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 59 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2600 pF @ 10 V |
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