IRFH8318TR2PBF
MOSFET N-CH 30V 21A 5X6 PQFNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IRFH8318TR2PBF is an N-Channel Power MOSFET designed for demanding applications. This device features a 30V Drain-Source Voltage (Vdss) and a continuous drain current of 27A at 25°C ambient or 120A at 25°C case temperature. The low on-resistance of 3.1mOhm at 20A and 10V gate-source voltage ensures efficient power transfer. With a gate charge (Qg) of 41 nC maximum at 10V and an input capacitance (Ciss) of 3180 pF maximum at 10V, it offers favorable switching characteristics. Packaged in an 8-PowerTDFN (PQFN 5x6) and supplied on cut tape, this MOSFET is suitable for surface mount assembly. Its performance makes it relevant for power management solutions in automotive and industrial sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 27A (Ta), 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.1mOhm @ 20A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.35V @ 50µA |
| Supplier Device Package | PQFN (5x6) |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3180 pF @ 10 V |
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