IRFH8316TRPBF
MOSFET N-CH 30V 27A/50A 8PQFNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFH8316TRPBF is an N-Channel Power MOSFET designed for high-efficiency power management applications. This device features a 30V drain-source breakdown voltage and offers continuous drain current capabilities of 27A at 25°C ambient and 50A at 25°C case temperature. The low on-resistance of 2.95mOhm maximum at 20A and 10V gate drive is achieved through advanced MOSFET technology. The 8-PQFN (5x6) package provides excellent thermal performance with a maximum power dissipation of 3.6W (Ta) and 59W (Tc). Key electrical parameters include a gate charge of 59 nC maximum at 10V and input capacitance of 3610 pF maximum at 10V. It is suitable for operation across a wide temperature range of -55°C to 150°C. This component finds application in automotive, industrial, and consumer electronics sectors requiring robust power switching.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 27A (Ta), 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.95mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.6W (Ta), 59W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 50µA |
| Supplier Device Package | 8-PQFN (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 59 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3610 pF @ 10 V |