IRFH8311TRPBF
MOSFET N CH 30V 32A PQFN5X6Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' HEXFET® N-Channel Power MOSFET, part number IRFH8311TRPBF, offers robust performance for demanding applications. This component features a 30V drain-source breakdown voltage and a continuous drain current capability of 32A at ambient temperature and up to 169A at case temperature. With a maximum Rds(on) of 2.1mOhm at 20A and 10V gate drive, it ensures efficient power transfer. The 5x6 PQFN package is designed for surface mounting, facilitating compact PCB layouts. Key parameters include a 66nC gate charge and 4960pF input capacitance, optimized for switching performance. This device is suitable for applications in automotive, industrial power control, and high-power conversion systems, operating across a wide temperature range of -55°C to 150°C.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TQFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 32A (Ta), 169A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.1mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.6W (Ta), 96W (Tc) |
| Vgs(th) (Max) @ Id | 2.35V @ 100µA |
| Supplier Device Package | PQFN (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 66 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4960 pF @ 10 V |
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