IRFH8303TRPBF
MOSFET N-CH 30V 43A/100A 8PQFNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IRFH8303TRPBF is an N-Channel StrongIRFET™ MOSFET designed for high-density power management applications. This component features a Drain-Source Voltage (Vdss) of 30V and offers a continuous drain current of 43A at ambient temperature (Ta) and 100A at case temperature (Tc). The Rds(on) is specified at a maximum of 1.1mOhm at 50A and 10V Vgs. With a maximum power dissipation of 3.7W (Ta) and 156W (Tc), it is suitable for demanding thermal environments. The device is packaged in an 8-PQFN (5x6) surface mount configuration, supplied on tape and reel. Key parameters include a gate charge (Qg) of 179 nC at 10V and input capacitance (Ciss) of 7736 pF at 24V. This MOSFET is utilized in industrial and automotive sectors where robust power switching is critical.
Additional Information
Series: HEXFET®, StrongIRFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 43A (Ta), 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.1mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.7W (Ta), 156W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 150µA |
| Supplier Device Package | 8-PQFN (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 179 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7736 pF @ 24 V |
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