IRFH7936TR2PBF
MOSFET N-CH 30V 20A PQFN56Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies MOSFET N-Channel, part number IRFH736TR2PBF, offers a 30V drain-source breakdown voltage. This N-Channel power MOSFET features a low on-resistance of 4.8mOhm at 20A and 10V Vgs, with a continuous drain current rating of 20A at 25°C ambient and 54A at 25°C case. The device exhibits a typical gate charge of 26nC at 4.5V Vgs and input capacitance of 2360pF at 15V Vds. Packaged in an 8-PowerTDFN (5x6) surface-mount configuration, it is supplied in cut tape (CT). This component is suitable for applications in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta), 54A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.8mOhm @ 20A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.35V @ 50µA |
| Supplier Device Package | 8-PQFN (5x6) |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 26 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2360 pF @ 15 V |