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IRFH7936TR2PBF

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IRFH7936TR2PBF

MOSFET N-CH 30V 20A PQFN56

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Infineon Technologies MOSFET N-Channel, part number IRFH736TR2PBF, offers a 30V drain-source breakdown voltage. This N-Channel power MOSFET features a low on-resistance of 4.8mOhm at 20A and 10V Vgs, with a continuous drain current rating of 20A at 25°C ambient and 54A at 25°C case. The device exhibits a typical gate charge of 26nC at 4.5V Vgs and input capacitance of 2360pF at 15V Vds. Packaged in an 8-PowerTDFN (5x6) surface-mount configuration, it is supplied in cut tape (CT). This component is suitable for applications in automotive and industrial power management systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)
Technical Details:
PackagingCut Tape (CT)
Package / Case8-PowerTDFN
Mounting TypeSurface Mount
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C20A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs4.8mOhm @ 20A, 10V
FET Feature-
Vgs(th) (Max) @ Id2.35V @ 50µA
Supplier Device Package8-PQFN (5x6)
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds2360 pF @ 15 V

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