IRFH7932TRPBF
MOSFET N-CH 30V 24A/104A PQFNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFH7732TRPBF is an N-Channel Power MOSFET designed for demanding applications. This device features a Drain-Source Voltage (Vdss) of 30V and offers a continuous drain current of 24A at ambient temperature and 104A at case temperature. The low on-resistance of 3.3mOhm at 25A and 10V is achieved with a 4.5V to 10V gate drive. Key parameters include a maximum gate charge (Qg) of 51 nC at 4.5V and an input capacitance (Ciss) of 4270 pF at 15V. The PQFN (5x6) Single Die package ensures efficient thermal performance with a maximum power dissipation of 3.4W at ambient temperature. Operating across a wide temperature range of -55°C to 150°C, this MOSFET is suitable for automotive, industrial, and power management systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 24A (Ta), 104A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.3mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.4W (Ta) |
| Vgs(th) (Max) @ Id | 2.35V @ 100µA |
| Supplier Device Package | PQFN (5x6) Single Die |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 51 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4270 pF @ 15 V |