IRFH7932TR2PBF
MOSFET N-CH 30V 24A PQFN56Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies presents the IRFH7732TR2PBF, a high-performance N-Channel MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 30V and a continuous drain current capability of 24A (Ta) or 104A (Tc). With a low on-resistance (Rds On) of 3.3mOhm at 25A and 10V, it minimizes conduction losses. The gate charge (Qg) is a maximum of 51 nC at 4.5V, and input capacitance (Ciss) is 4270 pF at 15V, facilitating efficient switching. The device is housed in a PQFN (5x6) Single Die package, suitable for surface mounting. Its maximum power dissipation is 3.4W (Ta), operating across a temperature range of -55°C to 150°C (TJ). This MOSFET is utilized in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 24A (Ta), 104A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.3mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.4W (Ta) |
| Vgs(th) (Max) @ Id | 2.35V @ 100µA |
| Supplier Device Package | PQFN (5x6) Single Die |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 51 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4270 pF @ 15 V |
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