IRFH7921TRPBF
MOSFET N-CH 30V 15A/34A PQFNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRFH7921TRPBF, offers 30V drain-source voltage and a continuous drain current of 15A at 25°C ambient, or 34A at 25°C case temperature. This device features a low Rds(on) of 8.5mOhm at 15A and 10V Vgs, with a gate charge of 14nC at 4.5V. It operates with drive voltages between 4.5V and 10V, and has a maximum gate-source voltage of ±20V. The component is housed in an 8-PowerVDFN (PQFN 5x6) surface mount package, supplied on tape and reel. Key parameters include an input capacitance (Ciss) of 1210pF at 15V. This MOSFET is suitable for applications in automotive and industrial power management.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Ta), 34A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.5mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta) |
| Vgs(th) (Max) @ Id | 2.35V @ 25µA |
| Supplier Device Package | PQFN (5x6) Single Die |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1210 pF @ 15 V |
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