IRFH7885TRPBF
MOSFET N-CH 80V 22A 8PQFNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies FASTIRFET™ N-Channel MOSFET, part number IRFH7885TRPBF, offers an 80V drain-source voltage and a continuous drain current of 22A at 25°C ambient. This component features a low on-resistance of 3.9mOhm at 50A and 10V gate drive, with a maximum gate charge of 54 nC at 10V. The input capacitance (Ciss) is 2311 pF at 40V. Designed for surface mounting, it utilizes an 8-PQFN (5x6) package. Power dissipation is rated at 3.6W ambient and 156W at case temperature. This MOSFET is suitable for applications in automotive and industrial power management.
Additional Information
Series: FASTIRFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-VQFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 22A (Ta) |
| Rds On (Max) @ Id, Vgs | 3.9mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.6W (Ta), 156W (Tc) |
| Vgs(th) (Max) @ Id | 3.6V @ 150µA |
| Supplier Device Package | 8-PQFN (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 54 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2311 pF @ 40 V |
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