IRFH7882TRPBF
MOSFET N-CH 80V 26A 8PQFNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies FASTIRFET™ series N-Channel Power MOSFET, part number IRFH7882TRPBF, features an 80V drain-source voltage and a continuous drain current of 26A at 25°C ambient. This device offers a low on-resistance of 3.1mOhm maximum at 50A and 10V gate-source voltage. It is housed in a compact 8-PQFN (5x6) surface mount package, providing excellent thermal performance with a maximum power dissipation of 195W at 25°C case temperature. Key parameters include a gate charge of 74 nC at 10V and an input capacitance of 3186 pF at 40V. Suitable for demanding applications in automotive and industrial power management, this MOSFET operates across a temperature range of -55°C to 150°C.
Additional Information
Series: FASTIRFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-VQFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 26A (Ta) |
| Rds On (Max) @ Id, Vgs | 3.1mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 4W (Ta), 195W (Tc) |
| Vgs(th) (Max) @ Id | 3.6V @ 250µA |
| Supplier Device Package | 8-PQFN (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 74 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3186 pF @ 40 V |