IRFH7787TRPBF
MOSFET N-CH 75V 68A PQFNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies presents the IRFH7787TRPBF, a StrongIRFET™ N-Channel Power MOSFET. This component features a 75V Drain-Source Voltage (Vdss) and a continuous drain current capability of 68A at 25°C (Tc), with a maximum power dissipation of 83W (Tc). The device exhibits a low on-resistance of 8mOhm at 41A and 10V Vgs. Designed for efficient power management, it operates with gate drive voltages from 6V to 10V and has a maximum gate-source voltage of ±20V. Key electrical characteristics include a maximum gate charge (Qg) of 110 nC at 10V and an input capacitance (Ciss) of 4030 pF at 25V. The IRFH7787TRPBF is housed in an 8-PowerTDFN package with 5x6 dimensions and is supplied on tape and reel. This MOSFET technology is widely utilized in industrial power supplies, automotive systems, and high-power motor control applications.
Additional Information
Series: HEXFET®, StrongIRFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 68A (Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 41A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Vgs(th) (Max) @ Id | 3.7V @ 100µA |
| Supplier Device Package | PQFN (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4030 pF @ 25 V |
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