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IRFH7446TRPBF

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IRFH7446TRPBF

MOSFET N-CH 40V 85A 8PQFN

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Infineon Technologies' IRFH7446TRPBF is a N-Channel StrongIRFET™ MOSFET designed for high-efficiency power conversion. This component features a 40V drain-source voltage and a continuous drain current capability of 85A at 25°C (Tc), with a maximum power dissipation of 78W (Tc). The low on-resistance of 3.3mOhm at 50A and 10V gate-source voltage is achieved through advanced MOSFET technology. It is supplied in an 8-PQFN (5x6) package for surface mounting, with tape and reel packaging for automated assembly. Key electrical characteristics include a typical gate charge of 98 nC at 10V and an input capacitance of 3174 pF at 25V. The operating temperature range is -55°C to 150°C (TJ). The HEXFET® series device is suitable for demanding applications in industrial and automotive sectors.

Additional Information

Series: HEXFET®, StrongIRFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-TQFN Exposed Pad
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C85A (Tc)
Rds On (Max) @ Id, Vgs3.3mOhm @ 50A, 10V
FET Feature-
Power Dissipation (Max)78W (Tc)
Vgs(th) (Max) @ Id3.9V @ 100µA
Supplier Device Package8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3174 pF @ 25 V

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