IRFH7194TRPBF
MOSFET N-CH 100V 11A/35A 8PQFNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies FASTIRFET™ HEXFET® MOSFET, part number IRFH7194TRPBF, is an N-Channel device featuring a drain-source voltage (Vdss) of 100 V. This surface mount component, packaged in an 8-PQFN (5x6) with tape and reel (TR) packaging, offers a continuous drain current (Id) of 11 A at 25°C ambient temperature and 35 A at 25°C case temperature. The maximum power dissipation is 3.6 W (Ta) and 39 W (Tc). Key electrical characteristics include a maximum Rds On of 16.4 mOhm at 21 A and 10 V, a gate charge (Qg) of 19 nC at 10 V, and an input capacitance (Ciss) of 733 pF at 50 V. Operating temperature range is -55°C to 150°C. This component is commonly utilized in automotive and industrial power management applications.
Additional Information
Series: FASTIRFET™, HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta), 35A (Tc) |
| Rds On (Max) @ Id, Vgs | 16.4mOhm @ 21A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.6W (Ta), 39W (Tc) |
| Vgs(th) (Max) @ Id | 3.6V @ 50µA |
| Supplier Device Package | 8-PQFN (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 733 pF @ 50 V |
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