IRFH7191TRPBF
MOSFET N-CH 100V 15A/80A PQFNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies FASTIRFET™, HEXFET® IRFH7191TRPBF is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a Drain-Source Voltage (Vdss) of 100V and supports a continuous drain current of 15A at 25°C ambient and 80A at 25°C case temperature. The device exhibits a low on-resistance of 8mOhm maximum at 48A and 10V gate drive. Key parameters include a gate charge (Qg) of 39 nC maximum at 10V and an input capacitance (Ciss) of 1685 pF maximum at 50V. With a maximum power dissipation of 3.6W (Ta) and 104W (Tc), it is suitable for demanding thermal environments. The component is housed in an 8-PowerTDFN package (PQFN 5x6) for surface mounting and operates across a temperature range of -55°C to 150°C. Typical applications include power supplies, automotive electronics, and industrial motor control.
Additional Information
Series: FASTIRFET™, HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Ta), 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 48A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.6W (Ta), 104W (Tc) |
| Vgs(th) (Max) @ Id | 3.6V @ 100µA |
| Supplier Device Package | PQFN (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 39 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1685 pF @ 50 V |