IRFH7190TRPBF
MOSFET N-CH 100V 15A/82A PQFNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies FASTIRFET™ / HEXFET® MOSFET N-Channel, part number IRFH7190TRPBF. This surface mount device features a 100V drain-source voltage (Vdss) and a continuous drain current capability of 15A at 25°C ambient and 82A at 25°C case temperature. The Rds(On) is specified at a maximum of 7.5mOhm at 49A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 39 nC (max) at 10V, and input capacitance (Ciss) of 1685 pF (max) at 50V. Power dissipation is rated at 3.6W (Ta) and 104W (Tc). The component operates within a temperature range of -55°C to 150°C (TJ) and is supplied in an 8-PowerTDFN package, with PQFN (5x6) as the supplier device package, delivered in tape and reel. This component is suitable for applications in automotive and industrial power management systems.
Additional Information
Series: FASTIRFET™, HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Ta), 82A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.5mOhm @ 49A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.6W (Ta), 104W (Tc) |
| Vgs(th) (Max) @ Id | 3.6V @ 100µA |
| Supplier Device Package | PQFN (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 39 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1685 pF @ 50 V |
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