IRFH7188TRPBF
MOSFET N-CH 100V 18A/105A PQFNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies FASTIRFET™ HEXFET® IRFH7188TRPBF is an N-channel power MOSFET designed for high-efficiency power conversion applications. This component features a 100V drain-source breakdown voltage and offers a continuous drain current capability of 18A at ambient temperature (Ta) and 105A at case temperature (Tc). The device exhibits a low on-resistance of 6mOhm at 50A and 10V gate-to-source voltage. With a maximum power dissipation of 3.8W (Ta) and 132W (Tc), it is suitable for demanding thermal environments. The PQFN (5x6) package with tape and reel packaging facilitates automated assembly. Key parameters include a gate charge of 50 nC at 10V and input capacitance of 2116 pF at 50V. This MOSFET is utilized in various industries, including automotive and industrial power management.
Additional Information
Series: FASTIRFET™, HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Ta), 105A (Tc) |
| Rds On (Max) @ Id, Vgs | 6mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 132W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 150µA |
| Supplier Device Package | PQFN (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2116 pF @ 50 V |
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