IRFH7187TRPBF
MOSFET N-CH 100V 18A/105A 8PQFNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies N-Channel MOSFET, part number IRFH7187TRPBF, from the FASTIRFET™, HEXFET® series. This device features a 100 V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 18 A at 25°C ambient temperature, scaling to 105 A at 25°C case temperature. The low on-resistance (Rds On) is specified as 6 mOhm maximum at 50 A and 10 V gate-source voltage. Power dissipation is rated at 3.8 W ambient and 132 W at 25°C case. The MOSFET utilizes N-Channel technology with a maximum gate-source voltage of ±20V and a threshold voltage (Vgs(th)) of 3.6V maximum at 150 µA. Input capacitance (Ciss) is a maximum of 2116 pF at 50 V, and gate charge (Qg) is 50 nC maximum at 10 V. Packaged in an 8-PQFN (5x6) for surface mounting, this component is suitable for applications in automotive and industrial power management. The part is supplied on a tape and reel.
Additional Information
Series: FASTIRFET™, HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Ta), 105A (Tc) |
| Rds On (Max) @ Id, Vgs | 6mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 132W (Tc) |
| Vgs(th) (Max) @ Id | 3.6V @ 150µA |
| Supplier Device Package | 8-PQFN (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2116 pF @ 50 V |
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