IRFH7185TRPBF
MOSFET N CH 100V 19A 8QFNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies FASTIRFET™, HEXFET® N-Channel Power MOSFET, part number IRFH7185TRPBF, offers a 100V drain-source breakdown voltage and a continuous drain current of 19A at 25°C ambient. This device features a low on-resistance of 5.2mOhm maximum at 50A and 10V gate drive. The 8-PQFN (5x6) package provides efficient thermal management with a power dissipation of 3.6W (Ta) and 160W (Tc). Key parameters include a gate charge of 54nC at 10V and input capacitance of 2320pF at 50V. Operating temperature ranges from -55°C to 150°C. This component is suitable for applications in automotive, industrial automation, and power supply designs. The device is supplied in Tape & Reel packaging.
Additional Information
Series: FASTIRFET™, HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 19A (Ta) |
| Rds On (Max) @ Id, Vgs | 5.2mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.6W (Ta), 160W (Tc) |
| Vgs(th) (Max) @ Id | 3.6V @ 150µA |
| Supplier Device Package | 8-PQFN (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 54 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2320 pF @ 50 V |
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