IRFH7184TRPBF
MOSFET N-CH 100V 20A/128A PQFNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies FASTIRFET™ HEXFET® N-Channel Power MOSFET, part number IRFH7184TRPBF, features a 100V drain-source breakdown voltage and a continuous drain current capability of 20A under typical ambient conditions and 128A at the case temperature. This device offers a low on-resistance of 4.8 mOhm maximum at 50A and 10V Vgs. The PQFN (5x6) package, suitable for surface mounting, provides efficient thermal management with a maximum power dissipation of 3.9W (Ta) and 156W (Tc). Key characteristics include a gate charge of 54 nC at 10V Vgs and an input capacitance (Ciss) of 2320 pF at 50V Vds. Operating across a temperature range of -55°C to 150°C, this MOSFET is designed for applications in automotive, industrial power control, and high-density power conversion systems.
Additional Information
Series: FASTIRFET™, HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta), 128A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.8mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.9W (Ta), 156W (Tc) |
| Vgs(th) (Max) @ Id | 3.6V @ 150µA |
| Supplier Device Package | PQFN (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 54 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2320 pF @ 50 V |
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