IRFH7182TRPBF
MOSFET N-CH 100V 23A/157A 8PQFNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies presents the IRFH7182TRPBF, a high-performance N-Channel MOSFET from the FASTIRFET™, HEXFET® series. This component features a 100V drain-source voltage (Vdss) and offers a continuous drain current of 23A at ambient temperature (Ta) and 157A at case temperature (Tc). With a low on-resistance (Rds On) of 3.9mOhm at 50A and 10V, and a maximum power dissipation of 195W (Tc), it is engineered for demanding applications. The device utilizes a surface mount 8-PQFN (5x6) package, facilitating efficient thermal management. Key electrical parameters include a gate charge (Qg) of 74 nC at 10V and input capacitance (Ciss) of 3120 pF at 50V. This MOSFET is suitable for various industrial sectors, including automotive and power management systems, where robust switching performance is critical.
Additional Information
Series: FASTIRFET™, HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 23A (Ta), 157A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.9mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 4W (Ta), 195W (Tc) |
| Vgs(th) (Max) @ Id | 3.6V @ 250µA |
| Supplier Device Package | 8-PQFN (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 74 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3120 pF @ 50 V |
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