IRFH7110TRPBF
MOSFET N-CH 100V 11A/58A 8PQFNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFH7110TRPBF is an N-Channel Power MOSFET designed for high-efficiency power management applications. This device features a 100V drain-to-source voltage (Vdss) and offers a continuous drain current of 11A at 25°C ambient and 58A at 25°C case temperature. The low on-resistance (Rds On) of 13.5mOhm maximum at 35A and 10V gate drive voltage, coupled with a maximum gate charge (Qg) of 87 nC, ensures minimal conduction and switching losses. With a maximum power dissipation of 3.6W (Ta) and 104W (Tc), it is suitable for demanding thermal environments. The IRFH7110TRPBF is supplied in an 8-PQFN (5x6) package for surface mounting, facilitating compact board layouts. Typical applications include automotive systems, industrial power supplies, and server power management.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TQFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta), 58A (Tc) |
| Rds On (Max) @ Id, Vgs | 13.5mOhm @ 35A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.6W (Ta), 104W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 100µA |
| Supplier Device Package | 8-PQFN (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 87 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3240 pF @ 25 V |
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