IRFH7110TR2PBF
MOSFET N CH 100V 11A PQFN5X6Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies N-Channel Power MOSFET, part number IRFH7110TR2PBF, offers a 100V drain-source breakdown voltage. This surface mount device in an 8-PQFN (5x6) package features a continuous drain current capability of 11A at ambient temperature and 58A at case temperature. With a low Rds(On) of 13.5mOhm at 35A and 10V gate-source voltage, it is suitable for demanding applications. Key parameters include a maximum gate charge of 87 nC at 10V and an input capacitance (Ciss) of 3240 pF at 25V. This component is utilized in power management, automotive, and industrial sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-TQFN Exposed Pad |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta), 58A (Tc) |
| Rds On (Max) @ Id, Vgs | 13.5mOhm @ 35A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4V @ 100µA |
| Supplier Device Package | 8-PQFN (5x6) |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 87 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3240 pF @ 25 V |
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