IRFH7107TRPBF
MOSFET N-CH 75V 14A/75A 8PQFNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFH7107TRPBF is a N-Channel Power MOSFET designed for high-performance applications. This component features a drain-source voltage (Vds) of 75V and a continuous drain current (Id) of 14A at ambient temperature, increasing to 75A at case temperature. The Rds On is specified at a maximum of 8.5mOhm at 45A and 10V gate drive. With a gate charge (Qg) of 72 nC at 10V, it offers efficient switching characteristics. The device is housed in an 8-PQFN (5x6) package, suitable for surface mounting. Power dissipation is rated at 3.6W (Ta) and 104W (Tc). Operating temperature ranges from -55°C to 150°C. This MOSFET is well-suited for use in automotive and industrial power management systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Ta), 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.5mOhm @ 45A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.6W (Ta), 104W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 100µA |
| Supplier Device Package | 8-PQFN (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 72 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3110 pF @ 25 V |
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