IRFH7004TR2PBF
MOSFET N CH 40V 100A PQFN5X6Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies presents the IRFH7004TR2PBF, a high-performance N-Channel MOSFET designed for demanding power applications. This component features a 40V drain-source voltage and a continuous drain current capability of 100A at 25°C (Tc). The low on-resistance of 1.4mOhm at 100A and 10V (Vgs) ensures efficient power transfer. With a gate charge (Qg) of 194 nC at 10V and input capacitance (Ciss) of 6419 pF at 25V, it offers excellent switching characteristics. The device is housed in an 8-PQFN (5x6) package with an exposed pad for enhanced thermal management, suitable for surface mounting. This MOSFET is utilized in various industries, including automotive and industrial power management systems. The component is supplied in Cut Tape (CT) packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-VQFN Exposed Pad |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.4mOhm @ 100A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 3.9V @ 150µA |
| Supplier Device Package | 8-PQFN (5x6) |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 194 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6419 pF @ 25 V |
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