IRFH6200TRPBF
MOSFET N-CH 20V 49A/100A 8PQFNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
N-Channel 20 V 49A (Ta), 100A (Tc) 3.6W (Ta), 156W (Tc) Surface Mount 8-PQFN (5x6)
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 49A (Ta), 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 0.95mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.6W (Ta), 156W (Tc) |
| Vgs(th) (Max) @ Id | 1.1V @ 150µA |
| Supplier Device Package | 8-PQFN (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 10V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 230 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10890 pF @ 10 V |
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