IRFH6200TR2PBF
MOSFET N-CH 20V 100A 5X6 PQFNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies MOSFET N-Channel, part number IRFH6200TR2PBF, offers a 20V drain-source voltage and a continuous drain current of up to 100A (Tc). This N-Channel MOSFET, fabricated using advanced Metal Oxide technology, features a low on-resistance of 0.95mOhm at 50A and 10V. The device is presented in an 8-PQFN (5x6) package, suitable for surface mount applications. Key electrical characteristics include a gate charge of 230 nC at 4.5V and an input capacitance of 10890 pF at 10V. The IRFH6200TR2PBF finds application in power management solutions across various industries, including automotive and industrial automation. The component is provided in Cut Tape (CT) packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 49A (Ta), 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 0.95mOhm @ 50A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1.1V @ 150µA |
| Supplier Device Package | 8-PQFN (5x6) |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 230 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10890 pF @ 10 V |
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