IRFH5406TRPBF
MOSFET N-CH 60V 11A/40A 8PQFNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRFH5406TRPBF, offers a 60V drain-source breakdown voltage. This device features a low Rds(on) of 14.4mOhm maximum at 24A and 10V gate drive. Continuous drain current is rated at 11A at ambient temperature and 40A at case temperature, with a maximum power dissipation of 3.6W (Ta) and 46W (Tc). The IRFH5406TRPBF utilizes a surface mount 8-PQFN (5x6) package and operates across a temperature range of -55°C to 150°C. Key electrical characteristics include a maximum gate charge of 35 nC at 10V and an input capacitance of 1256 pF maximum at 25V. This component is suitable for applications in automotive and industrial power management.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta), 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 14.4mOhm @ 24A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.6W (Ta), 46W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 50µA |
| Supplier Device Package | 8-PQFN (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1256 pF @ 25 V |
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