IRFH5306TRPBF
MOSFET N-CH 30V 15A/44A PQFNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFH5306TRPBF is an N-Channel MOSFET designed for high-efficiency power management applications. This device features a 30V drain-source voltage (Vdss) and offers a continuous drain current of 15A at ambient temperature (Ta) and 44A at case temperature (Tc). With a maximum power dissipation of 3.6W (Ta) and 26W (Tc), it supports robust thermal performance. The on-resistance (Rds On) is specified at a maximum of 8.1mOhm at 15A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 12nC at 4.5V and an input capacitance (Ciss) of 1125pF at 15V. Operating across a temperature range of -55°C to 150°C, this MOSFET is housed in a PQFN (5x6) single die package, suitable for surface mounting. Its specifications make it well-suited for automotive and industrial power systems.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Ta), 44A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.1mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.6W (Ta), 26W (Tc) |
| Vgs(th) (Max) @ Id | 2.35V @ 25µA |
| Supplier Device Package | PQFN (5x6) Single Die |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1125 pF @ 15 V |
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