IRFH5306TR2PBF
MOSFET N-CH 30V 15A 5X6 PQFNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IRFH5306TR2PBF is an N-Channel Power MOSFET designed for demanding applications. This component features a 30V drain-to-source voltage (Vdss) and a continuous drain current capability of 15A (Ta) or 44A (Tc) at 25°C. The device offers a low on-resistance of 8.1mOhm at 15A and 10V, with a typical gate charge of 12 nC at 4.5V. Input capacitance (Ciss) is specified at a maximum of 1125 pF at 15V. The MOSFET is housed in a compact 8-PowerVDFN (PQFN 5x6) package, suitable for surface mounting. This technology is utilized in industrial automation, power supplies, and automotive systems. The part is supplied in a Cut Tape (CT) package.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Ta), 44A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.1mOhm @ 15A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.35V @ 25µA |
| Supplier Device Package | PQFN (5x6) Single Die |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1125 pF @ 15 V |
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