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IRFH5304TRPBF

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IRFH5304TRPBF

MOSFET N-CH 30V 22A/79A 8PQFN

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Infineon Technologies HEXFET® IRFH5304TRPBF is an N-Channel Power MOSFET designed for high-performance applications. This device features a 30V drain-source breakdown voltage (Vdss) and a low on-resistance of 4.5mOhm at 47A and 10V gate drive. It offers continuous drain current capabilities of 22A at ambient temperature (Ta) and 79A at case temperature (Tc), with a maximum power dissipation of 3.6W (Ta) and 46W (Tc). The MOSFET utilizes advanced trench technology for optimal performance. Key parameters include a gate charge (Qg) of 41 nC at 10V and input capacitance (Ciss) of 2360 pF at 10V. The IRFH5304TRPBF is housed in an 8-PQFN (5x6) surface mount package, supplied on tape and reel, and operates across a temperature range of -55°C to 150°C. This component is suitable for power management solutions in automotive and industrial sectors.

Additional Information

Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C22A (Ta), 79A (Tc)
Rds On (Max) @ Id, Vgs4.5mOhm @ 47A, 10V
FET Feature-
Power Dissipation (Max)3.6W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id2.35V @ 50µA
Supplier Device Package8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2360 pF @ 10 V

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