IRFH5304TR2PBF
MOSFET N-CH 30V 22A 8VQFNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IRFH5304TR2PBF is a robust N-Channel Power MOSFET designed for demanding applications. This component features a 30V drain-source voltage and a continuous drain current capability of 22A at ambient temperature and 79A at case temperature. The low on-resistance of 4.5mOhm at 47A and 10V gate-source voltage ensures efficient power transfer. Key electrical parameters include a gate charge of 41 nC (max) at 10V and input capacitance of 2360 pF (max) at 10V. The device utilizes advanced MOSFET technology and is housed in an 8-PQFN (5x6) surface mount package, supplied in cut tape. This product is utilized in various industries including automotive and industrial power management.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 22A (Ta), 79A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.5mOhm @ 47A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.35V @ 50µA |
| Supplier Device Package | 8-PQFN (5x6) |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2360 pF @ 10 V |
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