IRFH5303TRPBF
MOSFET N-CH 30V 23A/82A 8PQFNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® MOSFET N-Channel IRFH5303TRPBF. This 30V device features a low Rds(on) of 4.2mOhm at 49A, 10V, enabling efficient power switching. It offers a continuous drain current of 23A at ambient temperature and 82A at case temperature. Key parameters include a gate charge of 41nC at 10V and input capacitance of 2190pF at 15V. With a maximum power dissipation of 3.6W (Ta) and 46W (Tc), this MOSFET is suitable for demanding applications. The 8-PQFN (5x6) package with tape and reel mounting facilitates high-volume manufacturing. Operating temperature range is -55°C to 150°C. This component is widely utilized in automotive, industrial, and telecom power management systems.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 23A (Ta), 82A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.2mOhm @ 49A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.6W (Ta), 46W (Tc) |
| Vgs(th) (Max) @ Id | 2.35V @ 50µA |
| Supplier Device Package | 8-PQFN (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2190 pF @ 15 V |