IRFH5302TR2PBF
MOSFET N-CH 30V 32A 5X6 PQFNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies N-Channel Power MOSFET, part number IRFH5302TR2PBF, is a 30 V device designed for high-current applications. This MOSFET features a low on-resistance of 2.1 mOhm at 50 A and 10 V, enabling efficient power conversion. With a continuous drain current capability of 32 A at ambient temperature and 100 A at case temperature, it is suitable for demanding thermal management. The device offers a gate charge of 76 nC and an input capacitance of 4400 pF, facilitating fast switching speeds. Packaged in an 8-PowerVDFN (PQFN 5x6) surface-mount configuration, it is ideal for use in automotive, industrial power control, and battery management systems. It operates across a temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 32A (Ta), 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.1mOhm @ 50A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.35V @ 100µA |
| Supplier Device Package | PQFN (5x6) Single Die |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 76 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4400 pF @ 15 V |
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