IRFH5302DTRPBF
MOSFET N-CH 30V 29A/100A PQFNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFH5302DTRPBF is a single N-Channel Power MOSFET designed for high-performance applications. This device features a 30V drain-source breakdown voltage (Vdss) and a continuous drain current capability of 29A at ambient temperature (Ta) and 100A at case temperature (Tc). The low on-resistance (Rds On) is specified at 2.5mOhm maximum at 50A and 10V gate-source voltage (Vgs).
With a maximum power dissipation of 3.6W (Ta) and 104W (Tc), and a maximum junction temperature of 150°C, the IRFH5302DTRPBF is suitable for demanding thermal environments. Key electrical parameters include a maximum gate charge (Qg) of 55 nC at 10V and a maximum input capacitance (Ciss) of 3635 pF at 25V. The device operates with drive voltages ranging from 4.5V to 10V, and the gate-source voltage limit is ±20V.
Packaged in a PQFN (5x6) single die, this surface-mount component is supplied on a tape and reel. Its robust characteristics make it relevant for power management solutions in automotive and industrial sectors.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 29A (Ta), 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.5mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.6W (Ta), 104W (Tc) |
| Vgs(th) (Max) @ Id | 2.35V @ 100µA |
| Supplier Device Package | PQFN (5x6) Single Die |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3635 pF @ 25 V |