IRFH5302DTR2PBF
MOSFET N-CH 30V 29A 8VQFNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies MOSFET N-Channel, part number IRFH5302DTR2PBF. This 30 V device features a 2.5 mOhm Rds(on) at 50A, 10V. Continuous drain current is rated at 29A (Ta) and 100A (Tc). Key parameters include a gate charge of 55 nC (max) at 10 V and input capacitance of 3635 pF (max) at 25 V. The device utilizes MOSFET technology and is housed in an 8-PowerVDFN package (PQFN 5x6 single die) for surface mounting. This component is suitable for applications in automotive and industrial power management. It is supplied in Cut Tape (CT).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 29A (Ta), 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.5mOhm @ 50A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.35V @ 100µA |
| Supplier Device Package | PQFN (5x6) Single Die |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3635 pF @ 25 V |