IRFH5301TR2PBF
MOSFET N-CH 30V 35A 5X6 PQFNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IRFH5301TR2PBF is a 30V N-Channel MOSFET designed for high-performance power applications. This component features a continuous drain current capability of 35A at 25°C ambient and 100A at 25°C case temperature. With a low on-resistance of 1.85 mOhm at 50A and 10V Vgs, it minimizes conduction losses. Key electrical parameters include a gate charge of 77 nC maximum at 10V Vgs and an input capacitance (Ciss) of 5114 pF maximum at 15V Vds. The MOSFET is housed in an 8-PowerVDFN package, specifically a 5x6 PQFN (5x6) Single Die, suitable for surface mount applications. The threshold voltage (Vgs(th)) is specified at a maximum of 2.35V at 100µA. This device is commonly utilized in automotive, industrial, and consumer electronics power management solutions.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 35A (Ta), 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.85mOhm @ 50A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.35V @ 100µA |
| Supplier Device Package | PQFN (5x6) Single Die |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 77 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5114 pF @ 15 V |