IRFH5300TR2PBF
MOSFET N-CH 30V 40A PQFNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IRFH5300TR2PBF is an N-Channel Power MOSFET designed for high-efficiency power management applications. This device features a 30 V drain-to-source voltage rating and a continuous drain current capability of 40 A at ambient temperature and 100 A at case temperature. The low on-resistance of 1.4 mOhm at 50 A and 10 V, coupled with a gate charge of 120 nC maximum at 10 V, facilitates efficient switching performance. Input capacitance (Ciss) is specified at 7200 pF maximum at 15 V. The MOSFET is housed in an 8-PowerVDFN package, identified as PQFN (5x6) Single Die, suitable for surface mounting. This component is commonly utilized in automotive and industrial power systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Ta), 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.4mOhm @ 50A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.35V @ 150µA |
| Supplier Device Package | PQFN (5x6) Single Die |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7200 pF @ 15 V |