IRFH5250TR2PBF
MOSFET N-CH 25V 45A PQFNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' IRFH5250TR2PBF is an N-Channel Power MOSFET designed for high-performance applications. This component features a 25V drain-source voltage and a continuous drain current of 45A at ambient temperature (Ta), scaling up to 100A at case temperature (Tc). With a low on-resistance of 1.15mOhm at 50A and 10V, it offers efficient power handling. The device is packaged in an 8-PQFN (5x6) footprint for surface mounting and comes in Cut Tape (CT) packaging. Key electrical characteristics include a maximum gate charge of 110 nC at 10V and an input capacitance of 7174 pF at 13V. The threshold voltage (Vgs(th)) is a maximum of 2.35V at 150µA. This MOSFET is suitable for use in power management, automotive, and industrial systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 45A (Ta), 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.15mOhm @ 50A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.35V @ 150µA |
| Supplier Device Package | 8-PQFN (5x6) |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7174 pF @ 13 V |