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IRFH5250DTR2PBF

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IRFH5250DTR2PBF

MOSFET N-CH 25V 40A 8VQFN

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Infineon Technologies N-Channel Power MOSFET, part number IRFH5250DTR2PBF, features a 25V drain-to-source voltage and a continuous drain current of 40A at 25°C ambient, or 100A at 25°C case temperature. This device offers a low on-resistance of 1.4mOhm at 50A and 10V Vgs, with a gate charge of 83nC maximum. The input capacitance (Ciss) is 6115pF maximum at 13V Vds. Mounted via surface mount, it is supplied in an 8-PQFN (5x6) package, delivered on cut tape. This MOSFET is suitable for applications in automotive and industrial power management.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:
Technical Details:
PackagingCut Tape (CT)
Package / Case8-PowerVDFN
Mounting TypeSurface Mount
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C40A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs1.4mOhm @ 50A, 10V
FET Feature-
Vgs(th) (Max) @ Id2.35V @ 150µA
Supplier Device Package8-PQFN (5x6)
Drain to Source Voltage (Vdss)25 V
Gate Charge (Qg) (Max) @ Vgs83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds6115 pF @ 13 V

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