IRFH5220TRPBF
MOSFET N-CH 200V 3.8A/20A PQFNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® MOSFET, part number IRFH5220TRPBF, is an N-Channel power MOSFET designed for demanding applications. This component features a 200V Drain-to-Source Voltage (Vdss) and offers a continuous drain current of 3.8A at ambient temperature (Ta) and 20A at case temperature (Tc). The device boasts a maximum power dissipation of 3.6W (Ta) and 8.3W (Tc). With a low on-resistance (Rds On) of 99.9mOhm at 5.8A and 10V, and a gate charge (Qg) of 30 nC at 10V, the IRFH5220TRPBF facilitates efficient power switching. Its input capacitance (Ciss) is rated at a maximum of 1380 pF at 50V. Packaged in an 8-VQFN exposed pad with a 5x6mm footprint and supplied on tape and reel, this MOSFET is suitable for surface mounting. It operates across a wide temperature range of -55°C to 150°C. This component finds application in industrial automation, electric vehicle power management, and high-power computing systems.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-VQFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.8A (Ta), 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 99.9mOhm @ 5.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.6W (Ta), 8.3W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 100µA |
| Supplier Device Package | PQFN (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1380 pF @ 50 V |