IRFH5220TR2PBF
MOSFET N-CH 200V 3.8A PQFNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IRFH5220TR2PBF is an N-Channel Power MOSFET designed for demanding applications. This component features a 200V Drain-to-Source Voltage (Vdss) and a continuous drain current capability of 3.8A at ambient temperature (Ta) and 20A at case temperature (Tc). The device offers a low on-resistance (Rds On) of 99.9mOhm at 5.8A and 10V. Key parameters include a gate charge (Qg) of 30 nC (Max) at 10V and input capacitance (Ciss) of 1380 pF (Max) at 50V. Utilizing MOSFET technology, it is housed in an 8-VQFN exposed pad package, specifically a 5x6 PQFN, suitable for surface mounting. This component is commonly found in power management solutions across various industrial sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-VQFN Exposed Pad |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.8A (Ta), 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 99.9mOhm @ 5.8A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 5V @ 100µA |
| Supplier Device Package | PQFN (5x6) |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1380 pF @ 50 V |