IRFH5215TRPBF
MOSFET N-CH 150V 5A/27A PQFNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFH515TRPBF is a surface-mount N-Channel MOSFET designed for demanding applications. This component features a 150V drain-source breakdown voltage and offers a continuous drain current of 5A at ambient temperature (Ta) and 27A at case temperature (Tc). Its low on-resistance, specified as a maximum of 58mOhm at 16A and 10V, contributes to efficient power handling. The device is housed in an 8-VQFN exposed pad package, commonly referred to as PQFN (5x6), suitable for automated assembly. Key electrical characteristics include a 32nC maximum gate charge and 1350pF maximum input capacitance. Operating across a wide temperature range of -55°C to 150°C (TJ), this MOSFET is utilized in various industrial, automotive, and power management systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-VQFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Ta), 27A (Tc) |
| Rds On (Max) @ Id, Vgs | 58mOhm @ 16A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.6W (Ta), 104W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 100µA |
| Supplier Device Package | PQFN (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1350 pF @ 50 V |
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